Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states
Crossref DOI link: https://doi.org/10.1063/1.4905945
Published Online: 2015-01-13
Published Print: 2015-01-14
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Capriotti, M.
Lagger, P.
Fleury, C.
Oposich, M.
Bethge, O.
Ostermaier, C.
Strasser, G.
Pogany, D.
