Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence
Crossref DOI link: https://doi.org/10.1063/1.4907261
Published Online: 2015-01-30
Published Print: 2015-01-26
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Sun, Huarui https://orcid.org/0000-0003-1429-0611
Bajo, Miguel Montes
Uren, Michael J.
Kuball, Martin
Funding for this research was provided by:
Engineering and Physical Sciences Research Council (EP/K024345, EP/K026232)
