A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiNx coupled junction
Crossref DOI link: https://doi.org/10.1063/1.4927823
Published Online: 2015-08-03
Published Print: 2015-08-03
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Choi, Myung-Jea
Kim, Myeong-Ho
Choi, Duck-Kyun
Funding for this research was provided by:
National Research Foundation of Korea (2013R1A1A2064715)
