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Hetero-epitaxial growth of stoichiometry tunable Si<sub>1−x</sub>Ge<sub>x</sub>film via a low temperature aluminium-induced solid phase epitaxy (AI-SPE) process

Crossref DOI link: https://doi.org/10.1039/C5CE00956A

Published Online: 2015

Update policy: https://doi.org/10.1039/rsc_crossmark_policy

Authors

Lin, Chuan-Jung

Wei, Sung-Yen

Hsu, Chien-Chung

Yu, Sheng-Min

Sun, Wen-Ching

Lin, Tzer-Shen

Chen, Fu-Rong
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: The Royal Society of Chemistry has an exclusive publication licence for this journal

PUBLICATION HISTORY

: Received 18 May 2015; Accepted 13 July 2015; Accepted Manuscript published 14 July 2015; Advance Article published 29 July 2015; Version of Record published 10 August 2015

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