Crossmark

Short-term and long-term memory operations of synapse thin-film transistors using an In–Ga–Zn–O active channel and a poly(4-vinylphenol)–sodium β-alumina electrolytic gate insulator

Crossref DOI link: https://doi.org/10.1039/C6RA09503H

Published Online: 2016

Update policy: https://doi.org/10.1039/rsc_crossmark_policy

Authors

Kim, Yeo-Myeong

Kim, Eom-Ji

Lee, Won-Ho

Oh, Ji-Young

Yoon, Sung-Min
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SIMILARITY CHECK

: This document is Similarity Check deposited

COPYRIGHT AND LICENSING

: The Royal Society of Chemistry has an exclusive publication licence for this journal

PEER REVIEW METHOD

: Single-blind

PUBLICATION HISTORY

: Received 13 April 2016; Accepted 24 May 2016; Accepted Manuscript published 25 May 2016; Version of Record published 31 May 2016

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