Illarionov, Yury Yu
Rzepa, Gerhard
Waltl, Michael
Knobloch, Theresia
Grill, Alexander
Furchi, Marco M
Mueller, Thomas
Grasser, Tibor
Funding for this research was provided by:
EU Seventh Framework Programm (604391 Graphene Flagship)
STREP (MoRV 619234)
Austrian Science Fund (I2606-N30)
Austrian Science Fund (START Y 539-N16)
Journal title: 2D Materials
Article type: paper
Article title: The role of charge trapping in MoS 2 /SiO 2 and MoS 2 /hBN field-effect transistors
Copyright information: © 2016 IOP Publishing Ltd
License information: cc-by Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Publication dates
Date received: 2016-04-12
Date accepted: 2016-06-24
Online publication date: 2016-07-11