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Subthreshold swing improvement in MoS<sub>2</sub> transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO<sub>2</sub>/HfO<sub>2</sub> gate dielectric stack

Crossref DOI link: https://doi.org/10.1039/c7nr00088j

Published Online: 2017

Update policy: https://doi.org/10.1039/rsc_crossmark_policy

Authors

Nourbakhsh, Amirhasan

Zubair, Ahmad https://orcid.org/0000-0001-9827-3557
Joglekar, Sameer

Dresselhaus, Mildred

Palacios, Tomás
Funding

Funding for this research was provided by:

National Science Foundation (CIQM program)

Army Research Office (W911NF-14-2-0071)

Office of Naval Research (PECASE program)
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CROSSCHECK

: This document is CrossCheck deposited

IDENTIFIERS

: Ahmad Zubair (ORCID)

COPYRIGHT AND LICENSING

: The Royal Society of Chemistry has an exclusive publication licence for this journal

PUBLICATION HISTORY

: Received 4 January 2017; Accepted 19 April 2017; Accepted Manuscript published 20 April 2017; Advance Article published 27 April 2017; Version of Record published 11 May 2017