Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process
Crossref DOI link: https://doi.org/10.1063/1.4983013
Published Online: 2017-05-08
Published Print: 2017-05-14
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Kumazaki, Yusuke
Uemura, Keisuke
Sato, Taketomo
Hashizume, Tamotsu
Funding for this research was provided by:
Japan Society for the Promotion of Science (JP14J01371)
Japan Society for the Promotion of Science (JP15K13937)
Japan Society for the Promotion of Science (JP16H06421)
