Crossmark

Termination of Ge surfaces with ultrathin GeS and GeS<sub>2</sub> layers <i>via</i> solid-state sulfurization

Crossref DOI link: https://doi.org/10.1039/c7cp05990f

Published Online: 2017

Update policy: https://doi.org/10.1039/rsc_crossmark_policy

Authors

Chen, Hui https://orcid.org/0000-0002-3369-8113
Keiser, Courtney https://orcid.org/0000-0002-5748-5075
Du, Shixuan https://orcid.org/0000-0001-9323-1307
Gao, Hong-Jun https://orcid.org/0000-0002-6766-0623
Sutter, Peter https://orcid.org/0000-0002-3301-309X
Sutter, Eli https://orcid.org/0000-0002-6939-2714
Funding

Funding for this research was provided by:

Division of Materials Research (DMR-1607795)

National Natural Science Foundation of China (61390501)

National Natural Science Foundation of China (51210003)

National Natural Science Foundation of China (51325204)
License Information

Accepted Manuscript valid from 2018-11-29
More Information

SIMILARITY CHECK

: This document is Similarity Check deposited

RELATED DATA

: Supplementary Information

IDENTIFIERS

: Hui Chen (ORCID)

: Courtney Keiser (ORCID)

: Shixuan Du (ORCID)

: Hong-Jun Gao (ORCID)

: Peter Sutter (ORCID)

: Eli Sutter (ORCID)

PEER REVIEW METHOD

: Single-blind

PUBLICATION HISTORY

: Received 2 September 2017; Accepted 24 November 2017; Accepted Manuscript published 29 November 2017; Advance Article published 30 November 2017; Version of Record published 13 December 2017