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Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer

Crossref DOI link: https://doi.org/10.1063/1.5042064

Published Online: 2018-10-08

Published Print: 2018-10-01

Update policy: https://doi.org/10.1063/aip-crossmark-policy-page

Authors

Liu, J.-S.

Clavel, M. https://orcid.org/0000-0002-2925-6099
Pandey, R.

Datta, S.

Xie, Y.

Heremans, J. J.

Hudait, M. K. https://orcid.org/0000-0002-9789-3081
Funding

Funding for this research was provided by:

National Science Foundation (ECCS-1348653, ECCS-1507950)
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Text and Data Mining valid from 2018-10-08