Mollah, Shahab https://orcid.org/0000-0002-2848-2959
Gaevski, Mikhail
Chandrashekhar, MVS
Hu, Xuhong
Wheeler, Virginia
Hussain, Kamal
Mamun, Abdullah
Floyd, Richard
Ahmad, Iftikhar
Simin, Grigory
Eddy, Charles
Khan, Asif
Funding for this research was provided by:
National Science Foundation (ECCS Award nos. 1711322 and 1810116)
University of South Carolina (ASPIRE)
U.S. Naval Research Laboratory (Office of Naval Research)
MURI (Dr. Lynn Petersen)
DARPA DREAM (ONR N00014-18-1-2033)
Army Research Office (W911NF-18-1-0029)
Article Title: Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high- k ALD ZrO 2 dielectric
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2019 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-07-11
Date Accepted: 2019-09-24
Online publication date: 2019-10-25