Crossmark

Memristors based on multilayer graphene electrodes for implementing a low-power neuromorphic electronic synapse

Crossref DOI link: https://doi.org/10.1039/D0TC00316F

Published Online: 2020

Update policy: https://doi.org/10.1039/rsc_crossmark_policy

Authors

Yan, Xiaobing https://orcid.org/0000-0002-3266-515X
Cao, Gang

Wang, Jingjuan

Man, Menghua

Zhao, Jianhui

Zhou, Zhenyu

Wang, Hong

Pei, Yifei

Wang, Kaiyang

Gao, Chao

Lou, Jianzhong

Ren, Deliang

Lu, Chao https://orcid.org/0000-0002-6451-8453
Chen, Jingsheng https://orcid.org/0000-0003-3188-2803
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (61674050)

National Natural Science Foundation of China (61874158)

Hebei University (801260201300)

Hebei University (2015JQY01)

Institute of Microelectronics of the Chinese Academy of Sciences
License Information

Accepted Manuscript valid from 2021-03-05
More Information

SIMILARITY CHECK

: This document is Similarity Check deposited

RELATED DATA

: Supplementary Information

IDENTIFIERS

: Xiaobing Yan (ORCID)

: Chao Lu (ORCID)

: Jingsheng Chen (ORCID)

PEER REVIEW METHOD

: Single-blind

PUBLICATION HISTORY

: Received 17 January 2020; Accepted 4 March 2020; Accepted Manuscript published 5 March 2020; Advance Article published 12 March 2020; Version of Record published 9 April 2020