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Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors

Crossref DOI link: https://doi.org/10.1039/d0ra02265a

Published Online: 2020

Update policy: https://doi.org/10.1039/rsc_crossmark_policy

Authors

Xu, Peipei

Liang, Jiakun

Li, Hong https://orcid.org/0000-0003-3737-0833
Liu, Fengbin

Tie, Jun

Jiao, Zhiwei

Luo, Jing

Lu, Jing
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (11704008)

National Natural Science Foundation of China (91964101)

National Natural Science Foundation of China (11674005)

Beijing Municipal Commission of Education (110052971803/031)

North China University of Technology (110051360019XN140/004)
License Information

Version of Record valid from 2020-04-22
More Information

SIMILARITY CHECK

: This document is Similarity Check deposited

RELATED DATA

: Supplementary Information

IDENTIFIERS

: Hong Li (ORCID)

PEER REVIEW METHOD

: Single-blind

PUBLICATION HISTORY

: Received 11 March 2020; Accepted 26 March 2020; Version of Record published 22 April 2020