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The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

Published Online: 2020

Authors

Scalise, Emilio https://orcid.org/0000-0003-1465-0939
Barbisan, Luca https://orcid.org/0000-0002-1982-4443
Sarikov, Andrey https://orcid.org/0000-0001-9123-7203
Montalenti, Francesco https://orcid.org/0000-0001-7854-8269
Miglio, Leo https://orcid.org/0000-0002-1329-527X
Marzegalli, Anna https://orcid.org/0000-0003-3109-3353
Funding

Funding for this research was provided by:

H2020 LEIT Advanced Materials (CHALLENGE project - 3C-SiC Hetero-epitaxiALLy grow - no. 720827)
License Information

Accepted Manuscript valid from 2021-05-18
More Information

SIMILARITY CHECK

: This document is Similarity Check deposited

RELATED DATA

: Supplementary Information

IDENTIFIERS

: Emilio Scalise (ORCID)

: Luca Barbisan (ORCID)

: Andrey Sarikov (ORCID)

: Francesco Montalenti (ORCID)

: Leo Miglio (ORCID)

: Anna Marzegalli (ORCID)

PEER REVIEW METHOD

: Single-blind

PUBLICATION HISTORY

: Received 21 February 2020; Accepted 13 May 2020; Accepted Manuscript published 18 May 2020; Advance Article published 2 June 2020; Version of Record published 2 July 2020

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