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Half-Metal–Spin-Gapless-Semiconductor Junctions as a Route to the Ideal Diode

Crossref DOI link: https://doi.org/10.1103/PhysRevApplied.14.014082

Published Online: 2020-07-27

Update policy: https://doi.org/10.1103/crossmark-policy

Authors

Şaşıoğlu, Ersoy https://orcid.org/0000-0002-1701-528X
Aull, Thorsten https://orcid.org/0000-0002-5830-3392
Kutschabsky, Dorothea https://orcid.org/0000-0002-9610-3623
Blügel, Stefan

Mertig, Ingrid
Funding

Funding for this research was provided by:

European Union (ZS/2016/06/79307)
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Version of Record valid from 2020-07-27