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Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films

Crossref DOI link: https://doi.org/10.1016/j.actamat.2016.11.039

Published Print: 2017-02

Update policy: https://doi.org/10.1016/elsevier_cm_policy

Authors

Vilalta-Clemente, A.

Naresh-Kumar, G.

Nouf-Allehiani, M.

Gamarra, P.

di Forte-Poisson, M.A.

Trager-Cowan, C.

Wilkinson, A.J.
Funding

Funding for this research was provided by:

Engineering and Physical Sciences Research Council (EP/J015792/1)

Engineering and Physical Sciences Research Council (EP/J016098/1)

Engineering and Physical Sciences Research Council (EP/K032518/1)
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Text and Data Mining valid from 2017-02-01

Version of Record valid from 2016-11-16
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This article is maintained by: Elsevier

Article Title: Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films

Journal Title: Acta Materialia

CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.actamat.2016.11.039

Content Type: article

Copyright: © 2017 The Authors. Published by Elsevier Ltd on behalf of Acta Materialia Inc.

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