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Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors

Crossref DOI link: https://doi.org/10.1016/j.apsusc.2019.03.130

Published Print: 2019-07

Update policy: https://doi.org/10.1016/elsevier_cm_policy

Authors

Yang, Yu

Yang, Jiayan

Yin, Wenlei

Huang, Fanming

Cui, Anyang

Zhang, Dongxu

Li, Wenwu https://orcid.org/0000-0002-9307-1566
Hu, Zhigao

Chu, Junhao
Funding

Funding for this research was provided by:

National Key Research and Development Program of China (2016YFB0501604, 2017YFA0303403, 2018YFB0406500)

National Natural Science Foundation of China (61774061, 61504043, 61674057, 61505182, 61604056, 11575062, 21701151)

NSAF Foundation of China (U1830130)

Science and Technology Commission of Shanghai Municipality (18JC1412400)

Shanghai Institutions of Higher Learning

Fundamental Research Funds for the Central Universities
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This article is maintained by: Elsevier

Article Title: Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors

Journal Title: Applied Surface Science

CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.apsusc.2019.03.130

Content Type: article

Copyright: © 2019 Elsevier B.V. All rights reserved.