Lee, Jong Hoon
Ryu, Hyun
Ahn, Sang Jung
Noh, Young-Kyun
Oh, Jae-Eung
Kim, Young Heon
Funding for this research was provided by:
Korea Research Council of Fundamental Science and Technology
National Research Foundation of Korea (2011-0030233)
Korea Research Institute of Standards and Science
This article is maintained by: Elsevier
Article Title: Microstructural properties of GaN grown on a Si(110) substrate by gas-source molecular beam epitaxy: Dependence on the ammonia flux
Journal Title: Current Applied Physics
CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.cap.2014.12.017
Content Type: article
Copyright: Copyright © 2014 Elsevier B.V. All rights reserved.