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The Influence of ITO Dopant Density on J-V Characteristics of Silicon Heterojunction Solar Cells: Experiments and Simulations

Crossref DOI link: https://doi.org/10.1016/j.egypro.2015.07.103

Published Print: 2015-08

Update policy: https://doi.org/10.1016/elsevier_cm_policy

Authors

Kirner, Simon

Hartig, Manuel

Mazzarella, Luana

Korte, Lars

Frijnts, Tim

Scherg-Kurmes, Harald

Ring, Sven

Stannowski, Bernd

Rech, Bernd

Schlatmann, Rutger
Funding

Funding for this research was provided by:

European Commission (608498)

European Commission (FP7-ENERGY)

Bundesministerium für Bildung und Forschung

Thüringer Aufbaubank

European Social Fund

Senatsverwaltung für Bildung, Jugend und Wissenschaft, Berlin
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Text and Data Mining valid from 2015-08-01

Text and Data Mining valid from 2015-08-01

Version of Record valid from 2015-07-23
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This article is maintained by: Elsevier

Article Title: The Influence of ITO Dopant Density on J-V Characteristics of Silicon Heterojunction Solar Cells: Experiments and Simulations

Journal Title: Energy Procedia

CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.egypro.2015.07.103

Content Type: article

Copyright: Copyright © 2015 The Authors. Published by Elsevier Ltd.