Sun, H.
Montes Bajo, M.
Uren, M.J.
Kuball, M.
Funding for this research was provided by:
EPSRC (EP/K024345/1, EP/L007010/1 and EP/K014471/1)
This article is maintained by: Elsevier
Article Title: Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation
Journal Title: Microelectronics Reliability
CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.microrel.2014.09.020
Content Type: article
Copyright: Copyright © 2014 Elsevier Ltd. All rights reserved.