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A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Crossref DOI link: https://doi.org/10.1016/j.microrel.2017.11.022

Published Print: 2018-02

Update policy: https://doi.org/10.1016/elsevier_cm_policy

Authors

Kaczer, B.

Franco, J.

Weckx, P.

Roussel, Ph.J.

Putcha, V.

Bury, E.

Simicic, M.

Chasin, A.

Linten, D.

Parvais, B.

Catthoor, F.

Rzepa, G.

Waltl, M.

Grasser, T.
Funding

Funding for this research was provided by:

European Commission (261868)

European Commission (619234)
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This article is maintained by: Elsevier

Article Title: A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Journal Title: Microelectronics Reliability

CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.microrel.2017.11.022

Content Type: article

Copyright: © 2017 Elsevier Ltd. All rights reserved.