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Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells

Crossref DOI link: https://doi.org/10.1016/j.solmat.2013.06.015

Published Print: 2014-01

Update policy: https://doi.org/10.1016/elsevier_cm_policy

Authors

Naumann, Volker

Lausch, Dominik

Hähnel, Angelika

Bauer, Jan

Breitenstein, Otwin

Graff, Andreas

Werner, Martina

Swatek, Sina

Großer, Stephan

Bagdahn, Jörg

Hagendorf, Christian
Funding

Funding for this research was provided by:

BMBF project “xμ-Module” (03SF0400A)

German Federal Ministry for the Environment, Nature Conservation and Nuclear Safety

industry partners within the research cluster “SolarWinS”
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This article is maintained by: Elsevier

Article Title: Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells

Journal Title: Solar Energy Materials and Solar Cells

CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.solmat.2013.06.015

Content Type: article

Copyright: Copyright © 2013 Elsevier B.V. All rights reserved.