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Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements

Crossref DOI link: https://doi.org/10.1016/j.sse.2016.10.006

Published Print: 2017-02

Update policy: https://doi.org/10.1016/elsevier_cm_policy

Authors

Tomaszewski, Daniel

Głuszko, Grzegorz

Łukasiak, Lidia

Kucharski, Krzysztof

Malesińska, Jolanta
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Article Title: Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements

Journal Title: Solid-State Electronics

CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.sse.2016.10.006

Content Type: article

Copyright: © 2016 Elsevier Ltd. All rights reserved.