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Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAM

Crossref DOI link: https://doi.org/10.1016/j.sse.2016.10.007

Published Print: 2017-02

Update policy: https://doi.org/10.1016/elsevier_cm_policy

Authors

Takamura, Yota

Shuto, Yusuke

Yamamoto, Shu'uichiro

Funakubo, Hiroshi

Kurosawa, Minoru Kuribayashi

Nakagawa, Shigeki

Sugahara, Satoshi
Funding

Funding for this research was provided by:

JSPS KAKENHI

JST CREST

VLSI Design and Education Center
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This article is maintained by: Elsevier

Article Title: Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAM

Journal Title: Solid-State Electronics

CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.sse.2016.10.007

Content Type: article

Copyright: © 2016 Published by Elsevier Ltd.