Crossmark

Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistors

Crossref DOI link: https://doi.org/10.1016/j.sse.2016.10.009

Published Print: 2017-02

Update policy: https://doi.org/10.1016/elsevier_cm_policy

Authors

Baldauf, Tim

Heinzig, André

Trommer, Jens

Mikolajick, Thomas

Weber, Walter Michael
License Information

Text and Data Mining valid from 2017-02-01
More Information

This article is maintained by: Elsevier

Article Title: Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistors

Journal Title: Solid-State Electronics

CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.sse.2016.10.009

Content Type: article

Copyright: © 2016 Elsevier Ltd. All rights reserved.