Crossmark

An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models

Crossref DOI link: https://doi.org/10.1016/j.sse.2016.10.017

Published Print: 2017-02

Update policy: https://doi.org/10.1016/elsevier_cm_policy

Authors

Pereira, A.S.N.

de Streel, G.

Planes, N.

Haond, M.

Giacomini, R.

Flandre, D.

Kilchytska, V.
Funding

Funding for this research was provided by:

FAPESP

CNPq

FNRS
License Information

Text and Data Mining valid from 2017-02-01
More Information

This article is maintained by: Elsevier

Article Title: An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models

Journal Title: Solid-State Electronics

CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.sse.2016.10.017

Content Type: article

Copyright: © 2016 Elsevier Ltd. All rights reserved.