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Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

Crossref DOI link: https://doi.org/10.1016/j.sse.2016.10.018

Published Print: 2017-02

Update policy: https://doi.org/10.1016/elsevier_cm_policy

Authors

Elmessary, Muhammad A.

Nagy, Daniel

Aldegunde, Manuel

Seoane, Natalia

Indalecio, Guillermo

Lindberg, Jari

Dettmer, Wulf

Perić, Djordje

García-Loureiro, Antonio J.

Kalna, Karol
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Article Title: Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

Journal Title: Solid-State Electronics

CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.sse.2016.10.018

Content Type: article

Copyright: © 2016 Elsevier Ltd. All rights reserved.