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Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs

Crossref DOI link: https://doi.org/10.1016/j.sse.2016.10.020

Published Print: 2017-02

Update policy: https://doi.org/10.1016/elsevier_cm_policy

Authors

Karatsori, T.A.

Theodorou, C.G.

Haendler, S.

Dimitriadis, C.A.

Ghibaudo, G.
Funding

Funding for this research was provided by:

ENIAC places2be

ECSEL Waytogo
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This article is maintained by: Elsevier

Article Title: Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs

Journal Title: Solid-State Electronics

CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.sse.2016.10.020

Content Type: article

Copyright: © 2016 Elsevier Ltd. All rights reserved.