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Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation

Crossref DOI link: https://doi.org/10.1016/j.sse.2016.10.032

Published Print: 2017-02

Update policy: https://doi.org/10.1016/elsevier_cm_policy

Authors

Šimonka, Vito

Nawratil, Georg

Hössinger, Andreas

Weinbub, Josef

Selberherr, Siegfried
Funding

Funding for this research was provided by:

Austrian Federal Ministry of Science, Research and Economy

National Foundation for Research, Technology and Development
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This article is maintained by: Elsevier

Article Title: Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation

Journal Title: Solid-State Electronics

CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.sse.2016.10.032

Content Type: article

Copyright: © 2016 Elsevier Ltd. All rights reserved.