Deshpande, V.
Djara, V.
O'Connor, E.
Hashemi, P.
Balakrishnan, K.
Caimi, D.
Sousa, M.
Czornomaz, L.
Fompeyrine, J.
Funding for this research was provided by:
EU
This article is maintained by: Elsevier
Article Title: DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
Journal Title: Solid-State Electronics
CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.sse.2016.10.034
Content Type: article
Copyright: © 2016 Published by Elsevier Ltd.