Singh, Sarab Preet
Liu, Yi
Ngoo, Yi Jie
Kyaw, Lwin Min
Bera, Milan Kumar
Dolmanan, S B
Tripathy, Sudhiranjan
Chor, Eng Fong
Funding for this research was provided by:
Supported by SERC under A*star (106 169 0129)
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: Influence of PECVD deposited SiNxpassivation layer thickness on In0.18Al0.82N/GaN/Si HEMT
Copyright information: © 2015 IOP Publishing Ltd
Publication dates
Date received: 2015-01-10
Date accepted: 2015-07-13
Online publication date: 2015-08-17