Goto, Daisuke
Hijikata, Yasuto
Funding for this research was provided by:
Japan Society for the Promotion of Science (Grant-in-Aid for Scientific Researc)
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: Unified theory of silicon carbide oxidation based on the Si and C emission model
Copyright information: © 2016 IOP Publishing Ltd
License information: cc-by Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Publication dates
Date received: 2015-10-14
Date accepted: 2016-01-18
Online publication date: 2016-05-05