Xiang, Yong
Yu, Tongjun
Ji, Cheng
Cheng, Yutian
Yang, Xuelin
Kang, Xiangning
Shen, Bo
Zhang, Guoyi
Funding for this research was provided by:
National High-Tech Research and Development Program of China (2014AA032605)
National Key Basic Research Program of China (2012CB619306, 2013CB328705)
National Natural Science Foundation of China (61306110, 61376012)
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: Fluorine plasma treatment induced deep level traps and their effect on current transportation in Al0.83In0.17N/AlN/GaN Schottky barrier diodes
Copyright information: © 2016 IOP Publishing Ltd
Publication dates
Date received: 2016-05-17
Date accepted: 2016-06-03
Online publication date: 2016-07-11