Lo, Chun-Chieh
Hsieh, Tsung-Eong
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: Forming-free, bipolar resistivity switching characteristics of fully transparent resistive random access memory with IZO/α-IGZO/ITO structure
Copyright information: © 2016 IOP Publishing Ltd
Publication dates
Date received: 2015-10-06
Date accepted: 2016-03-23
Online publication date: 2016-08-24