Ajay, A
Schörmann, J
Jiménez-Rodriguez, M
Lim, C B
Walther, F
Rohnke, M
Mouton, I
Amichi, L
Bougerol, C
Den Hertog, M I
Eickhoff, M
Monroy, E
Funding for this research was provided by:
EU ERC-StG TeraGaN (278428)
French National Research Agency via the GaNEX program (ANR-11-LABX-0014)
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: Ge doping of GaN beyond the Mott transition
Copyright information: © 2016 IOP Publishing Ltd
Publication dates
Date received: 2016-07-08
Date accepted: 2016-09-15
Online publication date: 2016-10-05