Aubin, J
Hartmann, J M
Veillerot, M
Essa, Z
Sermage, B
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Very low temperature (450 °C) selective epitaxial growth of heavilyin situboron-doped SiGe layers
Copyright information: © 2015 IOP Publishing Ltd
Publication dates
Date received: 2015-06-26
Date accepted: 2015-09-04
Online publication date: 2015-10-05