Crossmark

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

Crossref DOI link: https://doi.org/10.1088/0268-1242/30/5/055015

Published Online: 2015-04-16

Published Print: 2015-05-01

Update policy: https://doi.org/10.1088/crossmark-policy

Authors

Li, Haoran

Keller, Stacia

Chan, Silvia H

Lu, Jing

DenBaars, Steven P

Mishra, Umesh K
Funding

Funding for this research was provided by:

Office of Naval Research

USA National Science Foundation
License Information

Text and Data Mining valid from 2015-04-16

Version of Record valid from 2015-04-16

Accepted Manuscript valid from 2016-04-16
More Information

Journal title: Semiconductor Science and Technology

Article type: paper

Article title: Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

Copyright information: © 2015 IOP Publishing Ltd

Publication dates

Date received: 2014-11-13

Date accepted: 2015-03-24

Online publication date: 2015-04-16