Ye, Cong
Deng, Tengfei
Zhang, Junchi
Shen, Liangping
He, Pin
Wei, Wei
Wang, Hao
Funding for this research was provided by:
National Nature Science Foundation of China (No.61474039)
Nature Science Foundation (Key Project) of Hubei Province (2015 CFA052)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Enhanced resistive switching performance for bilayer HfO2/TiO2resistive random access memory
Copyright information: © 2016 IOP Publishing Ltd
Publication dates
Date received: 2016-04-13
Date accepted: 2016-07-25
Online publication date: 2016-09-01