Fialho, M
Rodrigues, J
Magalhães, S
Correia, M R
Monteiro, T
Lorenz, K
Alves, E
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Effect of AlN content on the lattice site location of terbium ions in AlxGa1−xN compounds
Copyright information: © 2016 IOP Publishing Ltd
Publication dates
Date received: 2015-10-05
Date accepted: 2016-01-28
Online publication date: 2016-02-22