Long, H
Zeng, Y P
Mei, Y
Ying, L Y
Zhang, B P
Funding for this research was provided by:
Opened Fund of the State Key Laboratory on Integrated Optoelectronics, China (IOSKL2014KF08)
Science and Technology Key Program of Guangdong Province, China (2014B010119004)
China Postdoctoral Science Foundation (2015M582041)
National Natural Science Foundation of China (11474235, 61274052)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Coplanar metal–semiconductor–metal light-emitting devices with an n++ InGaN layer and their application to display
Copyright information: © 2016 IOP Publishing Ltd
Publication dates
Date received: 2016-01-09
Date accepted: 2016-04-01
Online publication date: 2016-04-28