Wang, C
Ke, S Y
Yang, J
Hu, W D
Qiu, F
Wang, R F
Yang, Y
Funding for this research was provided by:
Open Project launched by National Laboratory for Infrared Physics (M201405)
National Science Foundation of China (11274266)
Introducing Talent Project launched by Yunnan Province Government
Key Project of Applied Basic Research Project of Yunnan Province of China (2013FA029)
Journal title: Nanotechnology
Article type: paper
Article title: Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition
Copyright information: © 2015 IOP Publishing Ltd
Publication dates
Date received: 2014-11-18
Date accepted: 2015-01-22
Online publication date: 2015-02-20