Shi, Tuanwei
Fu, Mengqi
Pan, Dong
Guo, Yao
Zhao, Jianhua
Chen, Qing
Funding for this research was provided by:
NSF of China (11374022 and 61321001)
MOST of China (2012CB932702 and 2012CB932701)
Journal title: Nanotechnology
Article type: paper
Article title: Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm
Copyright information: © 2015 IOP Publishing Ltd
Publication dates
Date received: 2015-02-06
Date accepted: 2015-03-16
Online publication date: 2015-04-09