Kim, Sungjun
Park, Byung-Gook
Funding for this research was provided by:
National Research Foundation of Korea (2015R1A2A1A01007307)
Journal title: Journal of Physics D: Applied Physics
Article type: lett
Article title: Improved multi-level capability in Si3N4-based resistive switching memory using continuous gradual reset switching
Copyright information: © 2016 IOP Publishing Ltd
Publication dates
Date received: 2016-09-12
Date accepted: 2016-11-07
Online publication date: 2016-11-29