Perozek, J
Lee, H-P
Krishnan, B
Paranjpe, A
Reuter, K B
Sadana, D K
Bayram, C
Funding for this research was provided by:
Defense Advanced Research Projects Agency (N00014-13-C-0167)
Air Force Office of Scientific Research (FA9550-16-1-0224)
Office of Naval Research (N00014-13-C-0167)
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate
Copyright information: © 2017 IOP Publishing Ltd
Publication dates
Date received: 2016-09-12
Date accepted: 2016-12-06
Online publication date: 2017-01-09