Polak, M P
Scharoch, P
Kudrawiec, R
Funding for this research was provided by:
National Science Center Poland (2013/09/B/ST7/02395, 2016/20/T/ST3/00258)
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: The electronic band structure of Ge1−xSnxin the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect
Copyright information: © 2017 IOP Publishing Ltd
Publication dates
Date received: 2016-12-31
Date accepted: 2017-03-20
Online publication date: 2017-04-13