Hahn, Herwig
Sousa, Marilyne
Czornomaz, Lukas
Funding for this research was provided by:
Swiss National Secretariat for Education, Research and Innovation (SERI) (15.0313, 15.0346, 15.0339)
H2020 LEIT Information and Communication Technologies (688003, 688544, 688172)
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: Low-resistive, CMOS-compatible ohmic contact schemes to moderately doped n-InP
Copyright information: © 2017 IOP Publishing Ltd
Publication dates
Date received: 2017-04-03
Date accepted: 2017-04-26
Online publication date: 2017-05-17