Aldana, S
García-Fernández, P
Rodríguez-Fernández, Alberto
Romero-Zaliz, R
González, M B
Jiménez-Molinos, F
Campabadal, F
Gómez-Campos, F
Roldán, J B
Funding for this research was provided by:
Ministerio de Economía y Competitividad (TEC2014-52152-C3-1-R, TEC2014-54906-JIN, TEC2014-52152-C3-2-R)
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs
Copyright information: © 2017 IOP Publishing Ltd
Publication dates
Date received: 2017-03-30
Date accepted: 2017-06-13
Online publication date: 2017-07-24