Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET
Copyright information: © 2017 IOP Publishing Ltd
Publication dates
Date received: 2017-04-17
Date accepted: 2017-07-10
Online publication date: 2017-08-17