Ke, Shaoying
Lin, Shaoming
Ye, Yujie
Mao, Danfeng
Huang, Wei
Xu, Jianfang
Li, Cheng
Chen, Songyan
Funding for this research was provided by:
National Natural Science Foundation of China (61534005, 61474081)
National Basic Research Program of China (973 Program) (2013CB632103)
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer
Copyright information: © 2017 IOP Publishing Ltd
Publication dates
Date received: 2017-03-13
Date accepted: 2017-07-25
Online publication date: 2017-09-13