Dai, Shujun https://orcid.org/0000-0002-4851-7303
Gao, Hongwei
Zhou, Yu
Zhong, Yaozong
Wang, Jin
He, Junlei
Zhou, Rui
Feng, Meixin
Sun, Qian
Yang, Hui
Funding for this research was provided by:
The seed fund from SINANO, CAS (Y5AAQ51001)
Natural Science Foundation of Jiangsu Province (BK20160401)
Key Research and Development Program of Jiangsu Province (BE2017079)
The open fund of the State Key Laboratory on Integrated Optoelectronics (IOSKL2016KF04, IOSKL2016KF07)
State Key Laboratory of Luminescence and Applications (SKLA-2016-01)
National Key Research and Development Program (2016YFB0400104)
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: Unintentional incorporation of Ga in the nominal AlN spacer of AlInGaN/AlN/GaN Heterostructure
Copyright information: © 2017 IOP Publishing Ltd
Publication dates
Date received: 2017-06-09
Date accepted: 2017-12-06
Online publication date: 2017-12-27